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DATA SHEET
COMPOUND TRANSISTOR
PA103
HIGH FREQUENCY NPN TRANSISTOR ARRAY
FEATURES
* FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers * OUTSTANDING hFE LINEARITY * TWO PACKAGE OPTIONS: PA103B: Superior thermal dissipation due to studded ceramic package PA103G: Reduced circuit size due to 14-pin plastic SOP package for surface mounting
DESCRIPTION AND APPLICATIONS
The PA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package. Typical applications include: differential amplifiers and oscillators, high speed comparators, advanced cellular phone systems, electro-optic and other signal processing up to 1.5 gigabits/second.
ORDERING INFORMATION
PART NUMBER PACKAGE 14-pin ceramic package 14-pin plastic SOP (225 mil)
PA103B-E1 PA103G-E1
ABSOLUTE MAXIMUM RATINGS (TA = +25 C)
SYMBOLS VCBO* VCEO* VEBO* IC* PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Power Dissipation PA103B PA103G Junction Temperature PA103B PA103G Storage Temperature PA103B PA103G UNITS V V V mA mW mW C C C C RATINGS 15 6 2.5 40 650 350 200 125 -55 to +200 -55 to +125
TJ
TSTG
* Absolute maximum ratings for each transistor.
Caution electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P10708EJ2V0DS00 (2nd edition) Date Published October 1999 N CP(K) Printed in Japan
The mark
shows major revised points.
(c)
1995, 1999
PA103
PACKAGE DIMENSIONS (UNIT: mm)
PA103B
14 PIN CERAMIC PACKAGE
0.8 TOP VIEW
0.35 6.2 1.27
5.0 MAX. 2. 7 SIDE VIEW MAX.
4.5 MIN. 0.08
2.3 MIN.
1.6
BOTTOM VIEW
1.8
3.0
PA103G
14 PIN PLASTIC SOP (225 mil)
14
8
detail of lead end
3 -3 1 10.2 0.26 1.49 7
+7
6.55 0.2 4.38 0.1 1.1 0.16
0.6 0.2 1.27 0.40 +0.10 -0.05 0.1 0.1 1.59 +0.21 -0.20 NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. 0.10 M 1.42 MAX 0.15 -0.05
+0.10
0.10
See connection diagram for description of leads.
2
Data Sheet P10708EJ2V0DS00
PA103
ELECTRICAL CHARACTERISTICS (Unless otherwise specified TA = +25 C PA103B, PA103G common)
SYMBOLS ICBO IEBO hFE hFE1/hFE2 VBE VBE CCB CEB CCS fT PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 (Q1 to Q5) Emitter Cutoff Current at VEB = 1 V, IC = 0 (Q1 to Q5) Direct Current Amplification at VCE = 3 V, IC = 5 mA (Q1 to Q5) Direct Current Amplification Ratio at VCE = 3 V, IC = 5 mA, (Q1, Q2) Emitter to Base Voltage at VCE = 3 V, IC = 5 mA (Q1, Q2) Emitter to Base Voltage Difference, VCE = 3 V, IC = 5 mA |Q1 - Q2| Collector to Base Capacitance at VCB = 3 V, f = 1 MHz (Q1 to Q5) Emitter to Base Capacitance at VEB = 0, f = 1 MHz (Q1 to Q4) Collector/Substrate Capacitance at VCS = 3 V, f = 1 MHz (Q1 to Q4) Gain Bandwidth Product* at VCE = 3 V, IC = 10 mA V mV pF pF pF GHz UNITS MIN. TYP. MAX. 1.0 1.0 40 0.9 100 1.0 0.8 8.0 0.9 1.4 1.4 9.0 250 1.1 1.0 20 1.8 2.8 2.8
A A
* Measured by installing a single transistor in a Micro-X package: the value shown is a reference value.
CONNECTION DIAGRAM (Top View)
PA103B
14 13 SUB Q5 Q1 Q2 Q4 Q3 12 11 10 9 8
1
2
3
4
5
6
7
PA103G
14 13 SUB Q5 Q4 Q3 12 11 10 9 8
Q1
Q2
1
2
3
4
5
6
7
Data Sheet P10708EJ2V0DS00
3
PA103
TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25 C)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 100 Collector Current, IC (mA) 8 80 60 40 IB = 20 A Collector Current, IC (mA) 200 100 50 20 10 5 2 1 0.5 VCE = 3 V 0 0 1 2 3 4 5 Collector to Emitter Voltage, VCE (V) 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
6
4
2
DC CURRENT GAIN vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) 1000 500 DC Current Gain, hFE 200 100 50 20 10 0.5 1 2 5 10 20 Collector Current, IC (mA) 50 12
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
10
VCE = 5 V
8 3V 6 1V 4
1
2 5 10 20 Collector Current, IC (mA)
50
GAIN AND NOISE FIGURE OF INDIVIDUAL TRANSISTOR 20 VCC = 3 V f = 1 GHz GAIN Gain (dB) 6 10 4 Noise Figure, NF (dB) 8
NF 0
2
1
2
5 10 20 50 100 Collector Current, IC (mA)
0
4
Data Sheet P10708EJ2V0DS00
PA103
TYPICAL HIGH SPEED COMPARATOR
R1 ANALOG INPUT REFERENCE Q1 Q2
R2
R3 R5 Q7 Q5 Q8
R4 R6
Q6 Q9 Q10 OUTPUT
Q3
Q4
LATCH LATCH

Q11
Q12
FEATURES: 1. High Sensitivity 2. Low Positive Feedback time 3. Optimized latch recovery time
TYPICAL DIFFERENTIAL OSCILLATOR
VCC VCC C1 R2 C2 VOUT Q2 RFC 4 BENEFITS: 1. Ease of Integration 2. Very Low Distortion 3. Automatic Gain Control 4. Minimum Loading on Tank Circuit 5. Very Low 1/f Noise Q1
BIAS
AC SHORT
TYPICAL COMMON MODE DIFFERENTIAL AMP
VCC (10 V) 100 100 pF OUT IN 1 K VBB1 (5 V) VBB2 1 K 1 K 160 1000 pF FEATURES: 1. High Gain 2. Stable 3. Auto Gain Control
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Data Sheet P10708EJ2V0DS00
5
PA103
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired operation). (3) Design circuits connected Sub pin to the lowest voltage to prevent latch-up. (4) Design circuits as each pin voltage difference within 15 V maximum.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives.
PA103G
Soldering process Infrared ray reflow Soldering conditions Package peak temperature: 235 C, Hour: within 30 s. (more than 210 C), Time: 2 times, Limited days: no.Note Package peak temperature: 215 C, Hour: within 40 s. (more than 200 C), Time: 2 times, Limited days: no.Note Soldering tub temperature: less than 260 C, Hour: within 10 s. Time: 1 time, Limited days: no.Note Pin area temperature: less than 300 C, Hour: within 3 s./pin Limited days: no.Note Recommended condition symbol IR35-00-2
VPS
VP15-00-2
Wave soldering
WS60-00-1
Pin part heating
PA103B
Soldering process Infrared ray reflow Soldering conditions Peak package's surface temperature: 230 C or below, Reflow time: 10 seconds or below (210 C or higher), Number of reflow process: 1, Exposure limit*: None Partial heating method Terminal temperature: 260 C or below, Flow time: 10 seconds or below, Exposure limit*: None Symbol
Note It is the storage days after opening a dry pack, the storage conditions are 25 C, less than 65 % RH. Caution The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
6
Data Sheet P10708EJ2V0DS00
PA103
[MEMO]
Data Sheet P10708EJ2V0DS00
7
PA103
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98.8

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